We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Technology Stocks : Cree Inc. -- Ignore unavailable to you. Want to Upgrade?

To: slacker711 who wrote (10373)5/23/2021 12:26:47 PM
From: EvanG1 Recommendation

Recommended By

  Read Replies (1) | Respond to of 10478
GaN has a slightly better bandgap than SiC. Which makes them very similar in efficiency. Below is a slide from Cree's Palmour showing the difference between Si and SiC. Notice that the delta efficiency is similar to what you posted.

GaN goes on a bunch of substrates and it has always seemed to me that the transition between substrate is determined by the substrates thermal conductivity. The higher the thermal conductivity then the higher the allowable power density. This gets discussed more between GaN-on-SiC and GaN-on-diamond which are at the very high end. I am not exactly sure what the power density limit is for GaN-on-Si or if some other limit gets hit first.