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To: slacker711 who wrote (9845)7/27/2018 2:56:35 PM
From: slacker711
   of 10461
 
I know nothing about Power Integrations but they think that SiC is "rapidly taking hold" in EV's.


seekingalpha.com


Importantly, the product is capable of driving not only silicon IGBTs, but also silicon carbide MOSFETs, which are rapidly taking hold in the EV market.

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To: slacker711 who wrote (9845)7/27/2018 5:09:47 PM
From: slacker711
   of 10461
 
OTOH, STM is betting on GaN on Si for the RF space.

eetimes.com

STMicro, Macom Aim to Take GaN-on-Silicon Mainstream

Nitin Dahad
2/9/2018 00:01 AM EST
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LONDON — STMicroelectronics and Macom Technology Solutions announced an agreement that will improve Macom's access to manufacturing capacity for its gallium nitride-on-silicon technology and enable ST to manufacture its own products based on the technology for the RF energy and RF lighting markets.

The companies said they will develop GaN-on-silicon wafers to be manufactured by ST for Macom's use across an array of RF applications. While expanding Macom's source of supply, the agreement also grants to ST the right to manufacture and sell its own GaN-on-silicon products in RF markets outside of mobile phone, wireless basestation and related commercial telecom infrastructure applications — such as in RF energy for automotive and for RF lighting.

In addition to the access to increased wafer manufacturing capacity, Macom (Lowell, Mass.) said it expects to achieve an improved cost structure that could displace incumbent silicon LDMOS and accelerate the adoption of GaN-on-silicon in mainstream markets.

"Once the $0.04/watt barrier for high power RF semiconductor devices is crossed, significant opportunities for the RF energy market may open up," said Eric Higham, a director at research firm Strategy Analytics. "Potential RF energy device shipments could be in the hundreds of millions for applications including commercial microwave cooking, automotive lighting and ignition, and plasma lighting, with sales reaching into the billions of dollars."

ST and Macom said in a press statement they have been working together for several years to bring GaN-on-silicon production up in ST's CMOS wafer fab. As currently scheduled, sample production from ST is expected to begin in 2018.

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From: slacker7117/28/2018 8:08:25 AM
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A long interview with the CEO of Cree (Lowe)....from the end of June.


elektroniknet.de


Let’s talk briefly on the financial results. The last three financial years Cree lost revenue from 1.6 billion dollars to 1.4 billion, and generated a net loss of nearly 100 million in the financial year 2017. And if I sum up the first three quarter results of the financial year 2018 and the guidance for Q4 the annual revenue will be some 1.4 to 1.5 billion. What are you saying to the Board of Directors and to your shareholders in this respect?


We have been very clear with our shareholders, with our Board and with our employees: The focus of the turnaround is driving the growth of the Wolfspeed business. So Wolfspeed will have a higher percentage of the total business. Additionally Wolfspeed has a higher gross profit and a higher bottom-line profit, and this in turn will help us to increase profitability. Eventually the company revenue in 2022 will be roughly 2.4 billion dollars and the operating profit will be roughly 20 percent, a significant increase in profitability.


So far our shareholders are excited about this. We have said to them that by 2022 the Wolfspeed business will be some 850 million dollars, lighting some 700 million, and some 800 million with LED. And our customers are excited about this, because we are investing and extending our capacity in silicon carbide.

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To: slacker711 who wrote (9846)7/29/2018 10:35:57 AM
From: Lou Weed
1 Recommendation   of 10461
 
Hi Slacker - Power Int took a large bath on their investment in a company called Semisouth a few years back. Semisouth were the wrong horse to back. The CEO of PI (Balu) is a very smart guy and knows this industry very well. My guess is he took a bet too soon and on the wrong horse....but hey - poop happens.

We are on the cusp of the breakout of the first major adopter of SiC device tech - EV charging stations. The price point is there to take advantage of the value add the technology presents. Cree (Wolfspeed) have the best devices. Reason I believe that is because Infineon were willing to pay a $850M price tag to get their hands on it :-)

Yours,
BB

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To: slacker711 who wrote (9848)7/29/2018 10:38:53 AM
From: Lou Weed
   of 10461
 
Gregg's the right guy at the right time. Best move this company made in the past decade was to get this guy for CEO :-)

BB

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From: slacker7117/30/2018 11:17:51 PM
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ON Semi expects SiC automobile revenues to ramp starting in the 2nd half of 2018 and will be significant in the 2nd half of 2019.


seekingalpha.com


Chris Caso


Okay, thank you. And just a follow-up, you mentioned in your prepared remarks, silicon carbide. Just a couple of questions on that. Can you talk about when that becomes material in terms of revenue? I guess the expectation that build the second half of this year into 2019. Maybe talk a bit about what you expect to differentiate in the silicon carbide space?


Keith Jackson


Basically, there it is performance-based. In most of our sales, we expect to happen in modules where we get to match performance with our full portfolio. So therefore, we do think there is going to be a competitive edge on total efficiency in the marketplace. That growth again starts here in the second half, but we expected it will accelerate significantly in 2019 and by second half of next year provide significant revenue.

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To: Lou Weed who wrote (9849)7/31/2018 1:34:00 PM
From: slacker711
   of 10461
 
We are on the cusp of the breakout of the first major adopter of SiC device tech - EV charging stations.




From what I can tell, the move of SiC into electric vehicles themselves is happening faster than anticipated. I am sure that Tesla's use of a SiC inverter is influencing the design choices of other models that are in the design phase.

systemplus.fr

Now, I'd like to hear something similar from the initial deployments of 5G. I am fairly sure that GaN on SiC will find its way into mmWave macro base stations but I am less sure about what is happening with small cell base stations....and that the ladder is likely to make up a large portion of 5G deployments.

Slacker

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To: slacker711 who wrote (9852)7/31/2018 2:41:56 PM
From: Lou Weed
   of 10461
 
Wasn't aware that Tesla were using SiC for their drive train. That's great to hear. Are they Wolfspeed devices? Would have to be a very custom setup but it does make sense that Tesla would be doing this....

BB

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To: Lou Weed who wrote (9853)7/31/2018 2:54:58 PM
From: slacker711
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Wasn't aware that Tesla were using SiC for their drive train. That's great to hear. Are they Wolfspeed devices?




They are STM devices, but I would guess that Wolfspeed is providing the SiC substrates.

Slacker

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From: slacker7118/1/2018 10:44:33 AM
1 Recommendation   of 10461
 
New Wolfspeed Silicon Carbide Semiconductors First to Meet Automotive AEC-Q101 Standards
8/1/2018

wolfspeed.com

DURHAM, N.C. -- Wolfspeed, A Cree Company and leader in silicon carbide (SiC) power products, announces E-Series™, a new family of robust SiC semiconductor devices for the Electric Vehicle (EV) and renewable energy markets that delivers the highest available power density and durability for on-board automotive power conversion systems, off-board charging, solar inverters and other outdoor applications. Wolfspeed’s E-Series family is the first commercial family of SiC MOSFETs and diodes to be automotive AEC-Q101 qualified and PPAP capable. The designation makes it the only commercially available family of SiC MOSFETs and diodes that meet high-humidity and automotive qualifications to deliver some of the most reliable and corrosion-resistant components in the power market today.

“The new E-Series™ family provides automotive manufacturers with robust, automotive-qualified MOSFETs and diodes for on-board and off-board charging circuits, which are crucial to the evolution of EV technology,” said Cengiz Balkas, senior vice president and general manager of Wolfspeed. “The commercial rollout of the E-Series family establishes Wolfspeed as the first in the industry to launch a full suite of MOSFETs and diodes that are capable of withstanding high-humidity environments while offering the reliability and system-level value needed to drive widespread adoption of silicon carbide among automakers for their next generation of EVs.”

With the new automotive-qualified SiC MOSFET, Wolfspeed becomes the first and only silicon carbide semiconductor manufacturer to offer a complete family of qualified parts to the EV market. The portfolio expansion also enables Wolfspeed to supply power conversion components within an EV for an end-to-end solution.

The E-Series family includes:

The new E-Series SiC MOSFET is the only automotive AEC-Q101 qualified, PPAP capable and humidity resistant MOSFET available in the industry. It features Wolfspeed’s third generation rugged planar technology, which has more than 10 billion field hours. Offering the industry’s lowest switching losses and highest figure of merit, the E-Series 900V MOSFET is optimized for use in EV battery chargers and high voltage DC/DC converters and is featured in Wolfspeed’s 6.6kW B-Directional On-Board Charger reference design, which can be found here.

The new E-Series Merged-PIN Schottky Diodes (MPS) deliver high reliability for on-board power conversion systems and solar inverters, complementing Wolfspeed’s existing AEC-Q101 qualified 650V SiC diode portfolio. The diodes deliver a 1200V blocking capability with a current rating up to 20A at a TJ,Max = 175°C. Reference designs for the E-Series diodes are available here, including Wolfspeed’s 20kW Two-Level AFE and DC/DC Converter for Off-Board Chargers, which delivers more than 30 percent reduction in power loss when compared to existing three level Vienna Rectifiers.

The E-Series family also addresses the key challenge in designing and maintaining solar power systems: finding products that can withstand extremely harsh environmental conditions while maintaining peak performance. Since corrosion caused by humidity is a major consideration when designing outdoor power systems, the key qualification for harsh environments is the HV-H3TRB rating (also known as HVDC THB or THB80). The HV-H3TRB qualification testing was performed at 80 percent of the rated blocking voltage in an environmental chamber at a constant 85°C ambient with 85 percent relative humidity. Both the E-Series MOSFETs and diodes are HV-H3TRB rated, which means they are optimized for use in solar inverters and other outdoor systems as well as EVs.

Visit wolfspeed.com for more co

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