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From: Sam10/6/2017 9:26:07 AM
   of 9844
 

Analyst Actions: JP Morgan Downgrades Cree to Underweight from Neutral
MT NEWSWIRES 9:10 AM ET 10/6/2017
09:10 AM EDT, 10/06/2017 (MT Newswires) -- Cree's (CREE) average rating among analysts is a hold, with an average price target of $24.

Price: 28.22, Change: -1.35, Percent Change: -4.57

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From: Don Green10/19/2017 10:03:47 AM
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I am really surprised not to see a lot of chatter on this thread?

Why Shares of Cree, Inc. Popped 21% Today


host.madison.com

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From: Don Green10/19/2017 1:49:05 PM
   of 9844
 
Williams Capital Group downgrades Cree
Oct. 19, 2017
Brandy Betz,


Williams Capital Group downgrades Cree (NASDAQ: CREE) from Hold to Sell with a $27 price target.

Williams believes that Cree’s current valuation is overly optimistic.

The firm does approve of new CEO Gregg Lowe and the results of Wolfspeed but thinks the stock price is too high based partly on short covering

Cree shares are down 0.64%.

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To: Don Green who wrote (9779)10/19/2017 2:04:20 PM
From: zzpat
   of 9844
 
Top line fell.

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From: Don Green11/6/2017 10:04:51 AM
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Deutsche Bank initiates Cree at Buy
Nov. 6, 2017 |


Deutsche Bank initiates coverage of Cree (NASDAQ: CREE) with a Buy rating and $45 price target.

Latest analyst standings (via FT): 1Buy, 3 Outperform, 8 Hold, 2 Underperform, and 1 Sell.

Median price target: $27.

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From: hollyhunter11/6/2017 8:53:50 PM
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Chart looks solid. On watch for clear above 37.43.

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From: Sam12/19/2017 8:36:08 AM
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Technical View: Cree drops in pre-market trading, analyst action (TheFlyOnTheWall)
THE FLY 8:34 AM ET 12/19/2017
In the premarket the shares were last down over 4.4% to $37.85. At that price next support is at $36.25. Resistance is at the $38.50 area. As previously reported, JPMorgan added the shares to its Analyst Focus List as a short idea. The firm has a $28 price target on the stock. Northland downgraded the shares to Underperform with a $28 dollars price target.

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From: slacker7112/9/2018 1:50:31 PM
1 Recommendation   of 9844
 

I havent paid much attention to Cree in a long time but I am wondering if there is some real value that the market is underpricing in Wolfspeed. They did $71 million in revenue in Q2 and plan on doubling their capacity in the near-term. The gross margins are significantly above the corporate average.

Most importantly, the two biggest markets that SiC on GaN enable are electric cars and 5G. Both are at the knee of their growth curves. Cree has said that they are evaluating strategic alternatives for Wolfspeed and will announce something soon.

seekingalpha.com


Demand and excitement for our Wolfspeed products, silicon carbide power, as well as gallium nitride RF, remains very strong. Our silicon carbide platform is at the heart of the auto industry’s transition to electric vehicle. In the past six months or so, China announced the target to sell 7 million electric vehicles in 2025, nearly 20 times the level seen in 2016. France, Norway and the UK have announced timelines for the complete elimination of gasoline and diesel cars. GM, Toyota, Volkswagen, Ford, Daimler and BMW, have made announcements about investments in electric vehicles. Collectively, they have announced additional investments of nearly $60 billion in electric vehicles, with a significant number of new electric vehicle introductions over the coming decade.


We're in the early stage of a substantial opportunity as EVs become more prevalent on the roads across the world, and our leadership position in silicon carbide technology positions us extremely well to capitalize on that strong demand that this technology will have over the coming decade. Likewise, the recent release of the new 5G radio standard sets the stage for large scale trials and commercial deployment, giving us a meaningful opportunity for our gallium nitride business over the coming years. GAN RF transistors are better able to satisfy needed performance in the primary spectrum bands being allocated for 5G services, those between 3.3 gigahertz and 6 gigahertz, versus traditional silicon LDMOS transistors. We have a leadership position in GAN for these types of applications and believe the distinct advantages will accelerate its adoption in the marketplace.

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To: slacker711 who wrote (9785)2/12/2018 7:58:57 AM
From: slacker711
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Wolfspeed revenue growth.



microwavejournal.com

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To: slacker711 who wrote (9786)2/12/2018 8:01:13 AM
From: slacker711
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I have seen superchargers as a market frequently mentioned for Silicon Carbide.

eejournal.com

The characteristics of wide-bandgap materials that make them interesting compared to lower bandgap materials are results of the higher energy gap. This gives devices the ability to operate at higher temperatures and to switch larger voltages, with roughly ten times better conduction and switching properties than silicon. The wide bandgap also puts the electronic transition energy into the range of visible light, making them ideal for LEDs and semiconductor lasers.


As an example, one of the biggest barriers to the adoption of electric vehicles is charging time. Compared with refueling time of internal combustion cars, the recharge time for EVs is a deterrent to many consumers. EV chargers are rated from “Level 1” through “Level 4” – with the higher levels having higher power outputs. Tesla’s “Superchargers” have an output of around 120 kW. In order to get close to the speed of refueling a gasoline car, we would need an output of around 250 kW, which could recharge most EVs in around 5-10 minutes. Achieving those kinds of currents brings components such as high-voltage SiC diodes into play. Replacing silicon with SiC or GaN increases DC-to-DC and AC-to-DC conversion efficiencies in battery chargers from 85% to 95%, and DC-to-AC conversion in inverters from 96% to 99%.


We can’t simply take designs that were done with silicon components and swap in SiC or GaN, however. Because of the dramatically different properties of these materials and a completely different set of design constraints and limitations, we need to start almost from scratch with our wide-bandgap design. You’ll need to work on minimizing parasitic inductance and noise coupling, matching L and C, and precisely measuring voltage and current in feedback situations. Common-mode noise is a much more significant problem in wide-bandgap designs, requiring special care in mitigation. Commutation loop induction needs to be considered (and reduced) during PCB design. Gate-driving circuits for SiC and GaN are necessarily more complex than those required for conventional silicon circuits, and many of the suppliers of wide-bandgap semiconductors also offer pre-configured gate drivers to offset some of that design complexity.

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