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From: ynotgoal6/17/2021 7:49:20 AM
1 Recommendation   of 10478
 
Xi Jinping Picks Top Lieutenant to Lead China’s Chip Battle Against U.S.
finance.yahoo.com

(Bloomberg) -- Chinese President Xi Jinping is renewing his years-long push to achieve technology self-sufficiency by tapping a top deputy to shepherd a key initiative aimed at helping domestic chipmakers overcome U.S. sanctions.
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Another government-linked giant, China Electronics Corp., is one of the leaders in third-generation chip development, thanks to its investment in smaller firms including CEC Semiconductor Co. Using its own in-house technology, CEC Semiconductor makes silicone carbide-based power devices that can work at 200 degrees Celsius (360 degrees Fahrenheit) for a number of key industries from telecommunications to electric cars -- reducing China’s reliance on overseas suppliers such as Infineon Technologies AG, Rohm Co. and Cree Inc.

Shares of chipmakers climbed, with SMIC rallying more than 8% in Shanghai, set for its biggest one-day gain since October. Shares of National Silicon Industry Group Co., Will Semiconductor Co. and Maxscend Microelectronics Co. also advanced. Sanan Optoelectronics Co. and Wingtech Technology Co. -- among firms seen as potential beneficiaries of China’s third-generation chip effort -- gained 10% and 8%, respectively.
<snip>

With traditional chipmaking facing a series of challenges from technology development to heavy capital investment, third-generation chips -- which use compounds such as gallium nitride and silicon carbide to significantly improve the performance of semiconductors that power a wide range of industries and products -- may offer China its best chance to overcome rivals, senior academic Mao Junfa told an industry event in Nanjing earlier this month.

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From: EvanG6/18/2021 11:41:03 AM
1 Recommendation   of 10478
 
STM will compare it 3rd Gen SiC MOSFET to competitors for power inverter applications in a webcast on Tuesday. Time zone for times below is PDT.

st.com


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From: slacker7116/24/2021 10:49:10 AM
2 Recommendations   of 10478
 
Here comes China.

They could single handedly bring oversupply to the SiC industry.

linkedin.com

Hunan Sanan Inaugurates China's First Vertically Integrated Silicon Carbide Production Line
Published on June 23, 2021
Sanan Integrated Circuit
Sanan Integrated Circuit
439 followers

linkedin.com
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On June 23, Hunan Sanan Semiconductor, located in Changsha High-tech Industrial Park, held its official inauguration to commence its production.

Hunan Sanan Semiconductor has a total investment of 16B RMB constructed over a land area of about 667 thousand m2. Since its groundbreaking in July 2020, it has only taken less than a year to build this modern manufacturing facility for the entire silicon carbide compound semiconductor supply chain from crystal growth to power devices, packaging, and testing. A Mega Fab with a monthly output of 30,000 6-inch silicon carbide wafers is now complete and is ready for production.

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At the inaugural ceremony, Simon Lin, Vice Chairman and General Manager of Sanan Optoelectronics Co., Ltd., said in his speech that Hunan Sanan Semiconductor’s business covers substrate materials, epitaxial growth, wafer manufacturing, packaging and testing. It is the first in China and third in the worldwide industry as a vertically integrated silicon carbide chain, providing customers with high-quality and on-time delivery, while sharing the advantages of large-scale production costs.

Mao Weiming, Deputy Secretary of the Hunan Provincial Party Committee and Governor of Hunan Province, congratulated Hunan Sanan Semiconductor on their official start of production. The completion and commissioning of Hunan Sanan Semiconductor will bring strong energy into Changsha, which will further accelerate the integration of Changsha's integrated circuit (IC) and electronic information industries. It is reported that Hunan Sanan Semiconductor is expected to achieve an annual sales of 12B RMB, an annual tax contribution of 1.7BRMB, provide thousands of jobs, and bring up nearly 10,000 job opportunities in adjacent industries and communities.

Based in Central China, serving the world, accelerating the popularization of wide-bandgap semiconductors in the power conversion field

The third-generation semiconductor materials have superior electrical properties and can meet the new requirements of power electronics technologies for high temperature, high power, high voltage, and high frequency operation. Through large-scale production and its own silicon carbide material patent portfolio, Hunan Sanan Semiconductor serves a broad range of end markets such as in communications, server power supplies, photovoltaic, electric vehicle (EV) main traction inverters, on-board chargers (OBC), charge piles, smart grids, rail transit and other fields, and is able to realize the widely adopted and popular wide bandgap semiconductor devices.

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An R&D and manufacturing service platform company built to support the development of high-tech industries in Hunan

Hunan Sanan Semiconductor is China’s first vertically integrated silicon carbide manufacturing supply chain. The company provides flexible and diverse production capabilities from wafer substrates, epitaxy, fabrication, bare die to discrete devices, which is contributing to the growth of an industrial area centered around the Changsha High-Tech Park. The wide band-gap semiconductor industry will accelerate the development and verification by IC design companies while reducing design iterations and shortening manufacturing cycle times of end products, thus promoting the promise and benefits of the technology.

Use of material innovation to promote technological change and help achieve the 2060 carbon neutral vision

On the road to carbon neutrality, people need more efficiently produced clean energy. With its excellent electrical performance characteristics, third-generation semiconductor materials help power conversion systems achieve excellent power density with improved system efficiencies playing a vital role in key emerging markets such as electric / hybrid vehicles (EV/HEV), energy storage and charging systems. As part of its sustainable long-term development strategy, the company will continue to invest in expanding capacity, to commit to research and development of compound semiconductor materials and integrated circuits (ICs), and to build a competitive semiconductor manufacturing and service platform to serve the worldwide market.

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To: slacker711 who wrote (10381)6/24/2021 10:56:37 AM
From: Lou Weed
   of 10478
 
Yep - this should be a concern and not be underestimated.....

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From: slacker7116/30/2021 10:19:27 AM
2 Recommendations   of 10478
 
Compound semiconductors now national strategic materials, says GlobalWafers chair
Julian Ho, Taipei; Willis Ke, DIGITIMES
Wednesday 30 June 2021

digitimes.com

Compound semiconductors will become a key industry sector reaching a national strategic level in importance, as they will be badly needed to power many critical technological applications including low-orbit satellites, 5G communications, green energy, smart power grids, EVs and high-voltage components, according to Doris Hsu, chairperson of silicon wafer specialist GlobalWafers.

Hsu made the remarks when opening an online class on compound semiconductor materials and components, in her capacity as chief of the Taiwan Compound Semiconductor and Equipment Industry-Academia Consortium under the Photonics Industry & Technology Development Association (PIDA).

Hsu said many countries including Taiwan now enforce strict export controls on compound semiconductors, requiring special permits for outbound shipments of such strategic materials including even semi-insulated silicon carbide (SiC). She stressed that Taiwan must develop its own technology prowess in the segment.

Hsu continued the compound semiconductor industry chain involves quite complicated and difficult processes, ranging from crystal growth, components manufacturing, and measuring to rollout of finished products, as well as supply of related equipment. Accordingly, her consortium has invited specialists from diverse fields seeking to build a complete compound semiconductor ecosystem covering both vertical and horizontal segments such as design, IP, raw materials and equipment.

Taiwan compound semiconductors makers are facing keen competition from international players, given that US-based Cree and II-VI now dominate the supply of related substrates and there are more than 1,000 Chinese companies engaged in the development and production of compound semiconductors, according to Hsu.

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From: EvanG7/8/2021 7:28:24 PM
1 Recommendation   of 10478
 
STM has been using 500um thick 200mm wafers in their pilot line as opposed to 150mm wafers which are 350um thick. Does anyone know if 150mm wafers were thicker at the start of the rampup and then got thinner?

This link has the latest STM 200mm wafer quality report. Previous report said that thickness was in order to get warp and bow within spec. This report mentions both are within the final spec but doesn't mention if they will try for thinner wafers as a result.

Thicker wafers would be more lucrative for the wafer suppliers.

ec.europa.eu

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To: EvanG who wrote (10384)7/10/2021 5:14:47 PM
From: slacker711
1 Recommendation   of 10478
 
Fantastic find. Quite a bit of interesting information about the state of 200mm wafers. Am I correct in assuming that these wafers are from II-VI?

Overall, it appears that they are making progress on wafer quality but definitely have work to do on epi. Yields are obviously a wild card. =



Does anyone know if 150mm wafers were thicker at the start of the rampup and then got thinner?


This link has the latest STM 200mm wafer quality report. Previous report said that thickness was in order to get warp and bow within spec. This report mentions both are within the final spec but doesn't mention if they will try for thinner wafers as a result.

I started digging around and came across this oled materials catalog from ~'13. My understanding is that SiC wafers are usually produced off-axis. I couldn't find any further information about the c vs. c1 specification, but it appears that Cree was producing 500um 150mm wafers at one point.

macrogroup.ru



This article from Dow Corning talks quite a bit about the transition to 150mm SiC wafers. Ironically, since Cree is keeping the 200mm wafers in-house, this would actually hurt them until they started selling 200mm wafers.

power-mag.com

Control of the shape and flatness


Together with the reduction of extended defects, it is important to optimize the shape of the wafers via optimized crystal growth, wafering, and polishing processes. This has been specifically challenging for the 150 mm SiC substrates as the thickness of the substrates (350 µm) has been kept identical while switching from the 100 mm wafers to the 150 mm diameter. This constraint is different from what has occurred in the Silicon technology where the wafer thickness increases together with the expansion of the diameter. Maintaining thickness while increasing diameter brings additional crystal stress control requirements for 150 mm SiC.




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To: slacker711 who wrote (10385)7/10/2021 7:14:01 PM
From: EvanG
   of 10478
 
Am I correct in assuming that these wafers are from II-VI?

Yes. Cree would need a European division to be part of Horizon 2020 project. II-VI used their German division, even though wafers come from New Jersey.

Ironically, since Cree is keeping the 200mm wafers in-house, this would actually hurt them until they started selling 200mm wafers.

Don't understand why they talk that way. Cree is probably briefing everyone on their status and everyone knows but us. Even though Cree is not a part of project it would make sense to try to qualify wafers in parallel. Still lots of time.

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To: EvanG who wrote (10386)7/11/2021 8:12:55 PM
From: slacker711
   of 10478
 
Don't understand why they talk that way. Cree is probably briefing everyone on their status and everyone knows but us.


Sounds like OLED and blue.

Personally though, I think it is question mark whether Cree will sell 200mm wafers until competitors are closer to production (likely two years). They need to establish themselves as a first tier automotive semi supplier and the price advantage associated with 200mm may allow them to win some design slots that start shipping in '24 and beyond.

and even if they ultimately plan on selling 200mm wafers to competitors in '23, then threatening that they won't is likely a game of leverage. Not much different than STM and ON touting their internal supply or Infineon's press releases touting GTAT.

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To: slacker711 who wrote (10387)7/11/2021 9:49:58 PM
From: EvanG
   of 10478
 
if they ultimately plan on selling 200mm wafers to competitors in '23, then threatening that they won't is likely a game of leverage. Not much different than STM and ON touting their internal supply or Infineon's press releases touting GTAT.

II-VI model is very different. They will sell at all levels of supply chain. Wafer, chip, module. Regularly state their goal is to provide competitors a low enough price that they don't even try to develop their own capabilities. If Cree isn't interested they will take it.

STM will be close to pulling even with Cree in SiC revenue this year, kind of wonder if that is causing friction.

Think Infineon is using GTAT boules because they want to use their cold split technology. Not that the cold split thing makes sense to me, but they think it is a major advantage.

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