SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

   Technology StocksCree Inc.


Previous 10 Next 10 
To: slacker711 who wrote (10370)5/21/2021 9:33:17 AM
From: EvanG
1 Recommendation   of 10461
 
Great. You are more optimistic than I am.

Don't think I am for the mid voltages. Yole doesn't have the experts so I can't take them too seriously.

II-VI is the only company in datacom that can explain where the 3 material platforms crossover. GaAs for 300 meter transmission or less, silicon photonics for 300 meters to 2 kilometers and InP for greater than 2 kilometers. Most of the other companies just pretend silicon photonics will win everything. Yole itself, specifically Ezgi, even publishes the nonsense. So if they see 1kV as the crossover I have to take that as a valid data point.

Besides GaN-on-GaN other science projects in the mid voltages are 3C-SiC and Ga2O3. For very high voltages there is diamond. It could take a long time for an accurate picture to emerge.

Share RecommendKeepReplyMark as Last ReadRead Replies (2)


To: EvanG who wrote (10371)5/21/2021 10:46:27 AM
From: slacker711
   of 10461
 
Delete

Share RecommendKeepReplyMark as Last Read


To: EvanG who wrote (10371)5/21/2021 10:59:42 AM
From: slacker711
   of 10461
 
FWIW, I went down the rabbit hole of STM's new GaN offering. I think this presentation makes it pretty clear that GaN is meant as a competitor to existing silicon solutions. The performance improvement in efficiency seems fairly small over silicon so I assume that it is cost competitive due to it's smaller die area.

Engineering samples are available now but qualified parts won't be available until the end of 2023.

I'd like to see SiC converter efficiency curves using this application, but overall, SiC is only ever going to be able to compete in applications where it has substantially better power efficiencies.

Wide bandgap semiconductors: shaping the future of power electronics


https://www.st.com/content/st_com/en/st-pcim-2021.html?ecmp=tt21059_gl_link_may2021


Share RecommendKeepReplyMark as Last ReadRead Replies (1)


To: slacker711 who wrote (10373)5/23/2021 12:26:47 PM
From: EvanG
1 Recommendation   of 10461
 
GaN has a slightly better bandgap than SiC. Which makes them very similar in efficiency. Below is a slide from Cree's Palmour showing the difference between Si and SiC. Notice that the delta efficiency is similar to what you posted.

GaN goes on a bunch of substrates and it has always seemed to me that the transition between substrate is determined by the substrates thermal conductivity. The higher the thermal conductivity then the higher the allowable power density. This gets discussed more between GaN-on-SiC and GaN-on-diamond which are at the very high end. I am not exactly sure what the power density limit is for GaN-on-Si or if some other limit gets hit first.

energy.gov


Share RecommendKeepReplyMark as Last ReadRead Replies (1)


To: EvanG who wrote (10374)5/23/2021 3:46:30 PM
From: EvanG
   of 10461
 
I am not exactly sure what the power density limit is for GaN-on-Si or if some other limit gets hit first.

This figure sort of gives a better visualization of what I was saying. L-GaN should be Gan-on-Si and V-GaN should be GaN-on-GaN.

sciencedirect.com


Share RecommendKeepReplyMark as Last Read


From: slacker7115/25/2021 3:41:37 PM
2 Recommendations   of 10461
 
Some commentary on yields during the analyst conference today.

- Their pilot 200mm fab in NY has higher yields than their existing fab. We'll see how this translates to a production environment but that is certainly encouraging (or maybe just speaks to how bad Durham is).

- They currently have 10,000 human "touches/interventions" per day in their current facility. That will drop to zero in the new fab.

Lowe was clearly hearing from investors about the yields and came prepared with a couple of data points that he wanted to communicate.

jpmorgan.metameetings.net

Share RecommendKeepReplyMark as Last Read


From: slacker7116/2/2021 7:48:39 PM
1 Recommendation   of 10461
 
Cree, Inc. to Participate in Upcoming Investor Conferences
JUNE 2, 2021
DURHAM, N.C. – Cree, Inc. (Nasdaq: CREE), today announced that its senior management will present at the following virtual investor conferences:

Neill Reynolds, Chief Financial Officer, will present at the Evercore ISI Inaugural TMT Conference on June 7, 2021 at 3:30PM ET.
Gregg Lowe, Chief Executive Officer, and Neill Reynolds, Chief Financial Officer, will present at the Bank of America Global Technology Conference on June 8, 2021 at 11:30AM ET.
Gregg Lowe, Chief Executive Officer, and Neill Reynolds, Chief Financial Officer, will present at the Citi Silicon Valley Virtual IT Hardware Bus Tour on June 11, 2021 at 10:00AM ET.
A live webcast of the presentations will be available on the Investor section of Cree’s website. To access the webcasts, please visit investor.cree.com.

+++

Share RecommendKeepReplyMark as Last Read


From: slacker7116/16/2021 7:52:47 AM
   of 10461
 
From yesterday....good to have some bears on the stock.

Cree named short-term sell idea at Deutsche Bank 06:55 CREE Deutsche Bank analyst Sidney Ho placed a "Catalyst Call: Sell" on shares of Cree as a short-term sell idea. Cree has already begun to underperform, despite the positive demand backdrop in terms of electric vehicle sales, Ho tells investors in a research note. The analyst remains concerned about the sustainability of Cree's over 60% share in silicon carbide substrates which he notes represents two-thirds of gross profits today. Further, Ho is not convinced that Cree will prove to have a meaningful lead at 200mm either. The analyst also continues to believe Cree will be a year late in achieving its $1.5B sales target and expects it will not meet its greater than 50% gross margin target at all.

Read more at:
thefly.com

Share RecommendKeepReplyMark as Last Read


From: ynotgoal6/17/2021 7:49:20 AM
1 Recommendation   of 10461
 
Xi Jinping Picks Top Lieutenant to Lead China’s Chip Battle Against U.S.
finance.yahoo.com

(Bloomberg) -- Chinese President Xi Jinping is renewing his years-long push to achieve technology self-sufficiency by tapping a top deputy to shepherd a key initiative aimed at helping domestic chipmakers overcome U.S. sanctions.
<snip>

Another government-linked giant, China Electronics Corp., is one of the leaders in third-generation chip development, thanks to its investment in smaller firms including CEC Semiconductor Co. Using its own in-house technology, CEC Semiconductor makes silicone carbide-based power devices that can work at 200 degrees Celsius (360 degrees Fahrenheit) for a number of key industries from telecommunications to electric cars -- reducing China’s reliance on overseas suppliers such as Infineon Technologies AG, Rohm Co. and Cree Inc.

Shares of chipmakers climbed, with SMIC rallying more than 8% in Shanghai, set for its biggest one-day gain since October. Shares of National Silicon Industry Group Co., Will Semiconductor Co. and Maxscend Microelectronics Co. also advanced. Sanan Optoelectronics Co. and Wingtech Technology Co. -- among firms seen as potential beneficiaries of China’s third-generation chip effort -- gained 10% and 8%, respectively.
<snip>

With traditional chipmaking facing a series of challenges from technology development to heavy capital investment, third-generation chips -- which use compounds such as gallium nitride and silicon carbide to significantly improve the performance of semiconductors that power a wide range of industries and products -- may offer China its best chance to overcome rivals, senior academic Mao Junfa told an industry event in Nanjing earlier this month.

Share RecommendKeepReplyMark as Last Read


From: EvanG6/18/2021 11:41:03 AM
1 Recommendation   of 10461
 
STM will compare it 3rd Gen SiC MOSFET to competitors for power inverter applications in a webcast on Tuesday. Time zone for times below is PDT.

st.com


Share RecommendKeepReplyMark as Last Read
Previous 10 Next 10