| To: EvanG who wrote (10368) | 5/21/2021 10:59:42 AM | | From: slacker711 | | | | FWIW, I went down the rabbit hole of STM's new GaN offering. I think this presentation makes it pretty clear that GaN is meant as a competitor to existing silicon solutions. The performance improvement in efficiency seems fairly small over silicon so I assume that it is cost competitive due to it's smaller die area.
Engineering samples are available now but qualified parts won't be available until the end of 2023.
I'd like to see SiC converter efficiency curves using this application, but overall, SiC is only ever going to be able to compete in applications where it has substantially better power efficiencies.
Wide bandgap semiconductors: shaping the future of power electronics
https://www.st.com/content/st_com/en/st-pcim-2021.html?ecmp=tt21059_gl_link_may2021
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| To: slacker711 who wrote (10370) | 5/23/2021 12:26:47 PM | | From: EvanG | | | | GaN has a slightly better bandgap than SiC. Which makes them very similar in efficiency. Below is a slide from Cree's Palmour showing the difference between Si and SiC. Notice that the delta efficiency is similar to what you posted.
GaN goes on a bunch of substrates and it has always seemed to me that the transition between substrate is determined by the substrates thermal conductivity. The higher the thermal conductivity then the higher the allowable power density. This gets discussed more between GaN-on-SiC and GaN-on-diamond which are at the very high end. I am not exactly sure what the power density limit is for GaN-on-Si or if some other limit gets hit first.
energy.gov
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| To: EvanG who wrote (10371) | 5/23/2021 3:46:30 PM | | From: EvanG | | | | I am not exactly sure what the power density limit is for GaN-on-Si or if some other limit gets hit first.
This figure sort of gives a better visualization of what I was saying. L-GaN should be Gan-on-Si and V-GaN should be GaN-on-GaN.
sciencedirect.com
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| From: slacker711 | 5/25/2021 3:41:37 PM | | | | | | Some commentary on yields during the analyst conference today.
- Their pilot 200mm fab in NY has higher yields than their existing fab. We'll see how this translates to a production environment but that is certainly encouraging (or maybe just speaks to how bad Durham is).
- They currently have 10,000 human "touches/interventions" per day in their current facility. That will drop to zero in the new fab.
Lowe was clearly hearing from investors about the yields and came prepared with a couple of data points that he wanted to communicate.
jpmorgan.metameetings.net |
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| From: slacker711 | 6/2/2021 7:48:39 PM | | | | | | Cree, Inc. to Participate in Upcoming Investor Conferences
JUNE 2, 2021
DURHAM, N.C. – Cree, Inc. (Nasdaq: CREE), today announced that its senior management will present at the following virtual investor conferences:
Neill Reynolds, Chief Financial Officer, will present at the Evercore ISI Inaugural TMT Conference on June 7, 2021 at 3:30PM ET.
Gregg Lowe, Chief Executive Officer, and Neill Reynolds, Chief Financial Officer, will present at the Bank of America Global Technology Conference on June 8, 2021 at 11:30AM ET.
Gregg Lowe, Chief Executive Officer, and Neill Reynolds, Chief Financial Officer, will present at the Citi Silicon Valley Virtual IT Hardware Bus Tour on June 11, 2021 at 10:00AM ET.
A live webcast of the presentations will be available on the Investor section of Cree’s website. To access the webcasts, please visit investor.cree.com.
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| From: slacker711 | 6/16/2021 7:52:47 AM | | | | | | From yesterday....good to have some bears on the stock.
Cree named short-term sell idea at Deutsche Bank 06:55 CREE Deutsche Bank analyst Sidney Ho placed a "Catalyst Call: Sell" on shares of Cree as a short-term sell idea. Cree has already begun to underperform, despite the positive demand backdrop in terms of electric vehicle sales, Ho tells investors in a research note. The analyst remains concerned about the sustainability of Cree's over 60% share in silicon carbide substrates which he notes represents two-thirds of gross profits today. Further, Ho is not convinced that Cree will prove to have a meaningful lead at 200mm either. The analyst also continues to believe Cree will be a year late in achieving its $1.5B sales target and expects it will not meet its greater than 50% gross margin target at all.
Read more at:
thefly.com |
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| From: ynotgoal | 6/17/2021 7:49:20 AM | | | | | | Xi Jinping Picks Top Lieutenant to Lead China’s Chip Battle Against U.S.
finance.yahoo.com
(Bloomberg) -- Chinese President Xi Jinping is renewing his years-long push to achieve technology self-sufficiency by tapping a top deputy to shepherd a key initiative aimed at helping domestic chipmakers overcome U.S. sanctions.
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Another government-linked giant, China Electronics Corp., is one of the leaders in third-generation chip development, thanks to its investment in smaller firms including CEC Semiconductor Co. Using its own in-house technology, CEC Semiconductor makes silicone carbide-based power devices that can work at 200 degrees Celsius (360 degrees Fahrenheit) for a number of key industries from telecommunications to electric cars -- reducing China’s reliance on overseas suppliers such as Infineon Technologies AG, Rohm Co. and Cree Inc.
Shares of chipmakers climbed, with SMIC rallying more than 8% in Shanghai, set for its biggest one-day gain since October. Shares of National Silicon Industry Group Co., Will Semiconductor Co. and Maxscend Microelectronics Co. also advanced. Sanan Optoelectronics Co. and Wingtech Technology Co. -- among firms seen as potential beneficiaries of China’s third-generation chip effort -- gained 10% and 8%, respectively.
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With traditional chipmaking facing a series of challenges from technology development to heavy capital investment, third-generation chips -- which use compounds such as gallium nitride and silicon carbide to significantly improve the performance of semiconductors that power a wide range of industries and products -- may offer China its best chance to overcome rivals, senior academic Mao Junfa told an industry event in Nanjing earlier this month. |
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| From: EvanG | 6/18/2021 11:41:03 AM | | | | | | STM will compare it 3rd Gen SiC MOSFET to competitors for power inverter applications in a webcast on Tuesday. Time zone for times below is PDT.
st.com
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| From: slacker711 | 6/24/2021 10:49:10 AM | | | | | | Here comes China.
They could single handedly bring oversupply to the SiC industry.
linkedin.com
Hunan Sanan Inaugurates China's First Vertically Integrated Silicon Carbide Production Line
Published on June 23, 2021
Sanan Integrated Circuit
Sanan Integrated Circuit
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On June 23, Hunan Sanan Semiconductor, located in Changsha High-tech Industrial Park, held its official inauguration to commence its production.
Hunan Sanan Semiconductor has a total investment of 16B RMB constructed over a land area of about 667 thousand m2. Since its groundbreaking in July 2020, it has only taken less than a year to build this modern manufacturing facility for the entire silicon carbide compound semiconductor supply chain from crystal growth to power devices, packaging, and testing. A Mega Fab with a monthly output of 30,000 6-inch silicon carbide wafers is now complete and is ready for production.
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At the inaugural ceremony, Simon Lin, Vice Chairman and General Manager of Sanan Optoelectronics Co., Ltd., said in his speech that Hunan Sanan Semiconductor’s business covers substrate materials, epitaxial growth, wafer manufacturing, packaging and testing. It is the first in China and third in the worldwide industry as a vertically integrated silicon carbide chain, providing customers with high-quality and on-time delivery, while sharing the advantages of large-scale production costs.
Mao Weiming, Deputy Secretary of the Hunan Provincial Party Committee and Governor of Hunan Province, congratulated Hunan Sanan Semiconductor on their official start of production. The completion and commissioning of Hunan Sanan Semiconductor will bring strong energy into Changsha, which will further accelerate the integration of Changsha's integrated circuit (IC) and electronic information industries. It is reported that Hunan Sanan Semiconductor is expected to achieve an annual sales of 12B RMB, an annual tax contribution of 1.7BRMB, provide thousands of jobs, and bring up nearly 10,000 job opportunities in adjacent industries and communities.
Based in Central China, serving the world, accelerating the popularization of wide-bandgap semiconductors in the power conversion field
The third-generation semiconductor materials have superior electrical properties and can meet the new requirements of power electronics technologies for high temperature, high power, high voltage, and high frequency operation. Through large-scale production and its own silicon carbide material patent portfolio, Hunan Sanan Semiconductor serves a broad range of end markets such as in communications, server power supplies, photovoltaic, electric vehicle (EV) main traction inverters, on-board chargers (OBC), charge piles, smart grids, rail transit and other fields, and is able to realize the widely adopted and popular wide bandgap semiconductor devices.
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An R&D and manufacturing service platform company built to support the development of high-tech industries in Hunan
Hunan Sanan Semiconductor is China’s first vertically integrated silicon carbide manufacturing supply chain. The company provides flexible and diverse production capabilities from wafer substrates, epitaxy, fabrication, bare die to discrete devices, which is contributing to the growth of an industrial area centered around the Changsha High-Tech Park. The wide band-gap semiconductor industry will accelerate the development and verification by IC design companies while reducing design iterations and shortening manufacturing cycle times of end products, thus promoting the promise and benefits of the technology.
Use of material innovation to promote technological change and help achieve the 2060 carbon neutral vision
On the road to carbon neutrality, people need more efficiently produced clean energy. With its excellent electrical performance characteristics, third-generation semiconductor materials help power conversion systems achieve excellent power density with improved system efficiencies playing a vital role in key emerging markets such as electric / hybrid vehicles (EV/HEV), energy storage and charging systems. As part of its sustainable long-term development strategy, the company will continue to invest in expanding capacity, to commit to research and development of compound semiconductor materials and integrated circuits (ICs), and to build a competitive semiconductor manufacturing and service platform to serve the worldwide market. |
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