|This is interesting. Macom has been pushing GaN on Silicon as their solution for 4G/5G RF. It seems that they are now going to use a dual strategy with both GaN on silicon as well as GaN on silicon carbide (which is Cree's approach). |
We are also, I’ll point out, opening up the aperture slightly regarding our GaN-on-Silicon and GaN-on-Silicon carbide strategy. We’re now having our technologists do baseline characterization on different GaN-on-Silicon carbide transistors. We believe that there is a place for this technology in our portfolio, especially at the higher powers, the higher frequencies and some of our military and satellite customers are very interested in having MACOM participate here.
So we are opening up the aperture and we’re bringing engineering efforts to really establish a baseline of where the industry is regarding, I’ll say half micron, 0.4 micron, as well as 0.25 and even 0.1 micron GaN-on-Silicon carbide. And so we believe over the long-term, our engineers should have access to the best technologies there are.
As I mentioned, actually, on our last call, we have two foundries internally, but we also deal with nine external foundries. And so we want our power amplifier group to be able to have access to the best technologies. Now this will absolutely complement our GaN-on-Silicon efforts. We today still believe that GaN-on-Silicon is the right process for massive MIMO, given the volumes, given the price points and given the low power levels. So this is not going to take away from that effort, it will certainly be additive.