TriQuint Wins New $12.3M GaN DARPA Contract to Develop Ultra-Fast Power Switch
Technology
TriQuint's Leadership Developing Highly-Advanced, Mixed-Signal Digital / RF GaN
Circuits Led to New Opportunity in MPC Program
HILLSBORO, Ore. & RICHARDSON, Texas, May 01, 2012 (BUSINESS WIRE) -- TriQuint
Semiconductor, Inc. (TQNT), a leading RF solutions supplier and technology
innovator, today announced that it has been selected by the Defense Advanced
Research Projects Agency (DARPA) to lead a $12.3 million development program
focused on ultra-fast gallium nitride (GaN) switch technology for the Microscale
Power Conversion (MPC) program. TriQuint's revolutionary new GaN modulator has
the potential to enable highly-efficient RF transmitters substantially smaller
than current solutions.
TriQuint was selected by DARPA as the prime contractor for MPC Technical Area I,
which seeks to develop a high-speed, DC-to-DC switch (modulator) and related
process technology based on the company's innovative enhancement-mode GaN
transistors. TriQuint's technology aims to improve the integration of power
switches with advanced RF amplifiers to facilitate ultra-high efficiency,
reduced-size amplifiers for radar and communications applications.
TriQuint has been a pioneer in GaN development and research since 1999. TriQuint
currently leads multiple GaN process and manufacturing technology initiatives for
DARPA including the Nitride Electronic NeXt-Generation Technology (NEXT) program
as well as endeavors for the US Air Force, Army and Naval laboratories.
TriQuint is already exploring and bringing derivative devices to market made
possible by milestones achieved in its many GaN programs. "The break-through
performance demonstrated in 'NEXT' has helped us develop new devices, like our
GaN power switches, that will open up additional radar and communications
applications. We can substantially improve performance in these types of
systems," said TriQuint Vice President and General Manager for Defense Products
and Foundry Services, James L. Klein. "This work is also leading to lower voltage
GaN-based products. We see many exciting opportunities to develop more advanced
RF amplifiers with integrated power switches."
The enhancement mode power switching device for the MPC program will be designed
to have a blocking voltage of 200 volts, ultra-low dynamic on resistance of 1
ohm-mm and a slew rate of 500 volts per nanosecond. These capabilities will
provide state-of-the-art solid-state technology. RF amplifiers employing these
switches will target 75% system efficiency at X-band (8-12 GHz).
TriQuint is teamed with Rockwell Collins, the University of Colorado at Boulder
and Northrop Grumman--Technical Area II contractors--to create a new generation
of RF power amplifiers that use contour modulation for very high efficiency
performance that exceeds the capabilities of devices now available. Design
approaches focusing on miniature system-in-a-package or monolithic integration to
combine TriQuint's switch / modulator with the power amplifier micro-system will
be given preference.
TriQuint Gallium Nitride Product Innovation, Honors & Resources:
HeritageLeader in defense and commercial GaN research since 1999
----------------------------------------------------------------------------------------------------------
ResearchLeader in performance
and reliability GaN development
----------------------------------------------------------------------------------------------------------
University PartnersMassachusetts
Institute of Technology, University
of Notre Dame and
University
of Colorado at Boulder
----------------------------------------------------------------------------------------------------------
The Global GaN ImpactStrategy Analytics recognizes TriQuint's GaN
R&D / GaN Product Innovation
----------------------------------------------------------------------------------------------------------
Active R&D programsDARPA
NEXT program for highly complex, high frequency GaN MMICs
----------------------------------------------------------------------------------------------------------
Defense Production Act (DPA) Title
III program for GaN on SiC; Radar and
EW MMICs: Air Force and Navy sponsors
-------------------------------------------------------------------------------------
DARPA Microscale
Power Conversion program to develop ultra-fast GaN power
switch technology that is integrated into next-generation
amplifiers
-------------------------------------------------------------------------------------
DARPA Near Junction Thermal Transport (NJTT) GaN program to
increase
circuit power handling capabilities through enhanced thermal
management
-------------------------------------------------------------------------------------
Army
Research Laboratory (ARL) Cooperative Research and Development
Agreement (CRADA) to jointly develop advanced GaN circuits
-------------------------------------------------------------------------------------
Recent Honors2011 'Compound Semiconductor' CS
Industry Award for DARPA NEXT;
2012 CS
Industry Award for DARPA MPC program
----------------------------------------------------------------------------------------------------------
GaN ProductsWide
selection of innovative GaN amplifiers, transistors and
switches
----------------------------------------------------------------------------------------------------------
GaN Foundry0.25-micron
GaN on SiC; 100mm wafers; DC-18 GHz applications
----------------------------------------------------------------------------------------------------------
For more information about TriQuint defense / aerospace products and foundry
services, including GaN-based amplifiers, transistors, high-power switches and
integrated assembly capabilities, visit us at triquint.com, or
register to receive product updates and TriQuint's newsletter.
FORWARD LOOKING STATEMENTS |
