TriQuint Wins New $12.3M GaN DARPA Contract to Develop Ultra-Fast Power Switch Technology
TriQuint's Leadership Developing Highly-Advanced, Mixed-Signal Digital / RF GaN Circuits Led to New Opportunity in MPC Program
HILLSBORO, Ore. & RICHARDSON, Texas, May 01, 2012 (BUSINESS WIRE) -- TriQuint Semiconductor, Inc. (TQNT), a leading RF solutions supplier and technology innovator, today announced that it has been selected by the Defense Advanced Research Projects Agency (DARPA) to lead a $12.3 million development program focused on ultra-fast gallium nitride (GaN) switch technology for the Microscale Power Conversion (MPC) program. TriQuint's revolutionary new GaN modulator has the potential to enable highly-efficient RF transmitters substantially smaller than current solutions.
TriQuint was selected by DARPA as the prime contractor for MPC Technical Area I, which seeks to develop a high-speed, DC-to-DC switch (modulator) and related process technology based on the company's innovative enhancement-mode GaN transistors. TriQuint's technology aims to improve the integration of power switches with advanced RF amplifiers to facilitate ultra-high efficiency, reduced-size amplifiers for radar and communications applications.
TriQuint has been a pioneer in GaN development and research since 1999. TriQuint currently leads multiple GaN process and manufacturing technology initiatives for DARPA including the Nitride Electronic NeXt-Generation Technology (NEXT) program as well as endeavors for the US Air Force, Army and Naval laboratories.
TriQuint is already exploring and bringing derivative devices to market made possible by milestones achieved in its many GaN programs. "The break-through performance demonstrated in 'NEXT' has helped us develop new devices, like our GaN power switches, that will open up additional radar and communications applications. We can substantially improve performance in these types of systems," said TriQuint Vice President and General Manager for Defense Products and Foundry Services, James L. Klein. "This work is also leading to lower voltage GaN-based products. We see many exciting opportunities to develop more advanced RF amplifiers with integrated power switches."
The enhancement mode power switching device for the MPC program will be designed to have a blocking voltage of 200 volts, ultra-low dynamic on resistance of 1 ohm-mm and a slew rate of 500 volts per nanosecond. These capabilities will provide state-of-the-art solid-state technology. RF amplifiers employing these switches will target 75% system efficiency at X-band (8-12 GHz).
TriQuint is teamed with Rockwell Collins, the University of Colorado at Boulder and Northrop Grumman--Technical Area II contractors--to create a new generation of RF power amplifiers that use contour modulation for very high efficiency performance that exceeds the capabilities of devices now available. Design approaches focusing on miniature system-in-a-package or monolithic integration to combine TriQuint's switch / modulator with the power amplifier micro-system will be given preference.
TriQuint Gallium Nitride Product Innovation, Honors & Resources: HeritageLeader in defense and commercial GaN research since 1999 ---------------------------------------------------------------------------------------------------------- ResearchLeader in performance and reliability GaN development ---------------------------------------------------------------------------------------------------------- University PartnersMassachusetts Institute of Technology, University of Notre Dame and University of Colorado at Boulder ---------------------------------------------------------------------------------------------------------- The Global GaN ImpactStrategy Analytics recognizes TriQuint's GaN R&D / GaN Product Innovation ---------------------------------------------------------------------------------------------------------- Active R&D programsDARPA NEXT program for highly complex, high frequency GaN MMICs ---------------------------------------------------------------------------------------------------------- Defense Production Act (DPA) Title III program for GaN on SiC; Radar and EW MMICs: Air Force and Navy sponsors ------------------------------------------------------------------------------------- DARPA Microscale Power Conversion program to develop ultra-fast GaN power switch technology that is integrated into next-generation amplifiers ------------------------------------------------------------------------------------- DARPA Near Junction Thermal Transport (NJTT) GaN program to increase circuit power handling capabilities through enhanced thermal management ------------------------------------------------------------------------------------- Army Research Laboratory (ARL) Cooperative Research and Development Agreement (CRADA) to jointly develop advanced GaN circuits ------------------------------------------------------------------------------------- Recent Honors2011 'Compound Semiconductor' CS Industry Award for DARPA NEXT; 2012 CS Industry Award for DARPA MPC program ---------------------------------------------------------------------------------------------------------- GaN ProductsWide selection of innovative GaN amplifiers, transistors and switches ---------------------------------------------------------------------------------------------------------- GaN Foundry0.25-micron GaN on SiC; 100mm wafers; DC-18 GHz applications ----------------------------------------------------------------------------------------------------------
For more information about TriQuint defense / aerospace products and foundry services, including GaN-based amplifiers, transistors, high-power switches and integrated assembly capabilities, visit us at triquint.com, or register to receive product updates and TriQuint's newsletter.
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