TriQuint Signs U.S. Army Agreement to Support GaN Device Development
TriQuint's Gallium Nitride Leadership in DARPA Programs Led to Beneficial Joint
Development Program with the ARL
HILLSBORO, Ore. & RICHARDSON, Texas, Apr 16, 2012 (BUSINESS WIRE) -- TriQuint
Semiconductor, Inc. (TQNT), a leading RF solutions supplier and technology
innovator, today announced that it has signed a Cooperative Research and
Development Agreement (CRADA) with the U.S. Army Research Laboratory (ARL) to
explore and fabricate new high-frequency and mixed signal integrated circuits
(ICs) based on TriQuint gallium nitride (GaN) technology. The CRADA is designed
to accelerate new programs supporting communications, radar, electronic warfare
and similar applications.
The CRADA will give Army researchers dedicated access to TriQuint's development,
fabrication and packaging expertise. Researchers from both TriQuint and the ARL
will benefit from the new co-development environment. Circuits created as part of
the initiative are expected to be based on TriQuint's new E/D
(enhancement-depletion mode) GaN technology.
The new agreement leverages technology TriQuint created through on-going R&Dprograms. This GaN process has been utilized in Defense Advanced Research
Projects Agency (DARPA) initiatives, including the Nitride Electronic
NeXt-Generation (NEXT) program that TriQuint now leads. Through NEXT, TriQuint
continues to establish benchmark performance standards for mixed-signal (digital
and RF) devices. TriQuint GaN achievements also led to its selection as a prime
contractor in the Microscale Power Conversion (MPC) program that is developing
ultra-fast, high power DC-DC switch modulator technology for advanced integrated
RF amplifiers. TriQuint's role in MPC was recognized by Compound Semiconductor
magazine on March 12 with a 2012 CS Industry Award.
"Creative partnerships through Cooperative Research and Development Agreements
encourage outside businesses and university organizations to share in the
discovery of and investment in technologies. In this case, ARL is leveraging
industrial fabrication capabilities allowing ARL to maximize its return on
investment," said John Miller, Army Research Laboratory Director. "These advanced
IC processes, coupled with ARL's design expertise, could lead to innovations and
advancements in both military and consumer applications in communications, radar
and electronic warfare."
"TriQuint's gallium nitride research leads the industry. This new CRADA is
another example of ways that our work in one program benefits other DoD agencies
and service branches. We will provide access to our extensive development
capabilities and the ARL will provide designs and test circuits in support of
their advanced programs," said James L. Klein, TriQuint Vice President and
General Manager for Defense Products and Foundry Services.
TriQuint's new agreement with the ARL is designed to stimulate high performance
monolithic microwave integrated circuit (MMIC) development. The ARL's design and
testing capabilities will be leveraged with TriQuint's MMIC fabrication, testing
and packaging expertise. Both TriQuint and ARL researchers will work towards
identifying circuits of mutual interest that have the potential to advance
state-of-the-art design programs.
TriQuint has been a pioneer in GaN development and research since 1999. TriQuint
currently leads multiple GaN process and manufacturing technology programs for
DARPA, the US Air Force, Army and Naval laboratories including the Defense
Production Act Title III manufacturing enhancement program. TriQuint has also led
two other DARPA programs that were part of the Wide Bandgap Semiconductor (WBGS)
RF research initiative.
TriQuint Gallium Nitride Product Innovation, Honors & Resources:
HeritageLeader in defense and commercial GaN research since 1999
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ResearchLeader in performance
and reliability GaN development
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University PartnersMassachusetts
Institute of Technology, University
of Notre Dame and University
of Colorado at Boulder
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The Global GaN ImpactStrategy Analytics recognizes TriQuint's GaN
R&D / GaN Product Innovation
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Active R&D programsDARPA
NEXT program for highly complex, high frequency GaN MMICs
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Defense Production Act (DPA) Title
III program for GaN on SiC; Radar and EW MMICs: Air Force and
Navy sponsors
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DARPA Microscale
Power Conversion program to develop ultra-fast power switch
technology and integrate technology into next-generation amplifiers
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DARPA Near Junction Thermal Transport (NJTT) GaN program to
increase circuit power handling capabilities through enhanced
thermal management
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Recent Honors2011 'Compound Semiconductor' CS
Industry Award for DARPA NEXT; 2012 CS
Industry Award for DARPA MPC program
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GaN ProductsWide
selection of innovative GaN amplifiers, transistors and
switches
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GaN Foundry0.25-micron
GaN on SiC; 100mm wafers; DC-18 GHz applications
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For more information about TriQuint defense / aerospace products and foundry
services, including GaN-based amplifiers, transistors, high-power switches and
integrated assembly capabilities, visit us at triquint.com, or
register to receive product updates and TriQuint's newsletter.
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